File:Partially etched silicon dioxide via Nomarski DIC.jpg
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Size of this preview: 800 × 587 pixels. Other resolutions: 320 × 235 pixels | 640 × 469 pixels | 1,024 × 751 pixels | 1,280 × 939 pixels | 2,113 × 1,550 pixels.
Original file (2,113 × 1,550 pixels, file size: 755 KB, MIME type: image/jpeg)
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Date/Time | Thumbnail | Dimensions | User | Comment | |
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current | 21:48, 27 September 2009 | 2,113 × 1,550 (755 KB) | commons>Richstraka~commonswiki | {{Information |Description={{en|1=The subject of this image is a silicon integrated circuit wafer in the region between two circuit die. The oxide should have been fully etched in the horizontal area at the center of the image, but in fact was not - becau |
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