Indium gallium aluminium nitride
(Redirected from AlInGaN)
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Indium gallium aluminium nitride (InGaAlN, AlInGaN) is a GaN-based compound semiconductor. It is usually prepared by epitaxial growth, such as metalorganic chemical vapour deposition (MOCVD), molecular-beam epitaxy (MBE), pulsed laser deposition (PLD), etc.[1] This material is used for specialist opto-electronics applications, often in blue laser diodes and LEDs.
See also
References
- ^ "Aluminum Gallium Nitride - an overview | ScienceDirect Topics". www.sciencedirect.com. Retrieved 2022-09-04.
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